hd zc 104 1 h igh diode semiconductor features i o 5.0a vrrm 100v-600v high surge current capability applications rectifier marking polarity: color band denotes cathode er50x x:from 1 to 6 do-2 7 do-27 plastic-encapsulate diodes super fast recovery rectifier diode electrical characteristics (t a =25 unless otherwise specified) er50 item symbol unit test condition peak forward voltage v fm v i fm =5.0a i rrm1 t a =25 5 peak reverse current i rrm2 a v rm =v rrm t a =125 50 reverse recovery time t rr ns i f =0.5a i r =1a i rr =0.25a 35 r j-a between junction and ambient 55 thermal resistance(typical) r j-l /w between junction and lead 20 0.95 1.7 1.25 1 2 3 4 6 item symbol unit i f(av) i fsm i 60hz half-sine wave, resistance load, ta=50 60hz half-sine wave,1 cycle, ta=25 er50 100 200 300 400 600 5.0 150 70 140 210 280 420 v rms v junction capacitance c j pf 100 50 maximum rms voltage er50 1 thru er50 6
typical characteristics 2 h igh diode semiconductor fig.4:typical reverse characteristics voltage(%) ir(ua) tj=25 tj=125 tj=100 0.01 0.1 0 20 40 60 80 100 1.0 10 100 1000 v r d r l i f 0 if i r i rr t t rr i fig.5: diagram of circuit and testing wave form of reverse recovery time ???? ????????1o??????????????????????????? ????? ? o??-???e?????? a??????- ??? ???? ??2 ?? ?? ??2 ?? ??? ?? ? ?? ???? ?? ?? ?? ?? ?2 ? ? ???? ??????????2 ?????????? :;<=>?@abcd?@ec>f@gch?@i+ej@k?d;dl;h?@mn o?d ^o_,l@w@na|ondn@f`f}keaegogohe@^`kgakb@:dk_e@cdkkef g ~,-td@:;<=>?@ec>f@:; 3 h igh diode semiconductor do-2 7 unit: in inches (millimeters) min .375(9.50) .335(8.50) .052(1.30) .044(1.10) .220(5.60) .197(5.00) 0.96(24.5) min 0.96(24.5)
4 h igh diode semiconductor ammo box packaging specifications for axial lead rectifiers
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